Donor spin qubits in silicon
Our research focuses on phosphorus donors in silicon, where we achieve record-long quantum coherence times and conduct advanced experiments towards scalable quantum computing.
Our research focuses on phosphorus donors in silicon, where we achieve record-long quantum coherence times and conduct advanced experiments towards scalable quantum computing.
Our research focuses on phosphorus donors in silicon, where we achieve record-long quantum coherence times and conduct advanced experiments towards scalable quantum computing.
A phosphorus (31P) donor in silicon is akin to a hydrogen atom in a vacuum, possessing electron and nuclear spins of 1/2 that serve as natural qubits [Pla2012, Pla2013]. The silicon host material can be isotopically purified to be nearly free of nuclear spin-carrying isotopes, resulting in exceptional coherence times [Muhonen2015]. Recent advancements include two-qubit gate fidelities exceeding 99% [Madzik2022] and successful demonstration of J-coupling between two donor qubits [Stemp2023], showcasing the potential of silicon donors as a quantum computing platform. Ongoing research aims to enhance qubit performance through improved fabrication techniques, as illustrated by recent improvements in donor implantation precision [Jakob2023, Holmes2023].
X. Yu, B. Wilhelm, D. Holmes, A. Vaartjes, D. Schwienbacher, M. Nurizzo, A. Kringhøj, M. R. van Blankenstein, A. M. Jakob, P. Gupta, et al., Creation and manipulation of Schr¨odinger cat states of a nuclear spin qudit in silicon, arXiv preprint arXiv:2405.15494 (2024)
G. ¨Ustun, A. Morello, and S. Devitt, Single-step parity check gate set for quantum error correction, Quantum Science and Technology 9, 035037 (2024).
D. Holmes, B. Wilhelm, A. M. Jakob, X. Yu, F. E. Hudson, K. M. Itoh, A. S. Dzurak, D. N. Jamieson, and A. Morello, Improved placement precision of donor spin qubits in silicon using molecule ion implantation, Advanced Quantum Technologies 7, 2300316 (2024).
B. Joecker, H. G. Stemp, I. Fernandez de Fuentes, M. A. Johnson, and A. Morello, Error channels in quantum nondemolition measurements on spin systems, Physical Review B 109, 085302 (2024).
I. Fernandez de Fuentes, T. Botzem, M. A. Johnson, A. Vaartjes, S. Asaad, V. Mourik, F. E. Hudson, K. M. Itoh, B. C. Johnson, A. M. Jakob, et al., Navigating the 16-dimensional hilbert space of a high-spin donor qudit with electric and magnetic fields, Nature Communications 15, 1380 (2024).
H. G. Stemp, S. Asaad, M. R. van Blankenstein, A. Vaartjes, M. A. Johnson, M. T. Madzik, A. J.Heskes, H. R. Firgau, R. Y. Su, C. H. Yang, et al.,Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits, arXiv preprint arXiv:2309.15463 (2023).
R. Savytskyy, T. Botzem, I. Fernandez de Fuentes, B. Joecker, J. J. Pla, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, D. N. Jamieson, et al., An electrically driven single-atom “flip-flop” qubit, Science advances 9, eadd9408 (2023).
M. A. Johnson, M. T. Madzik, F. E. Hudson, K. M. Itoh, A. M. Jakob, D. N. Jamieson, A. Dzurak, and A. Morello, Beating the thermal limit of qubit initialization with a bayesian maxwell’s demon, Physical Review X 12, 041008 (2022).
M. T. Madzik, S. Asaad, A. Youssry, B. Joecker, K. M. Rudinger, E. Nielsen, K. C. Young, T. J. Proctor, A. D. Baczewski, A. Laucht, et al., Precision tomography of a three-qubit donor quantum processor in silicon, Nature 601, 348 (2022).
L. A. O’Neill, B. Joecker, A. D. Baczewski, and A. Morello, Engineering local strain for single-atom nuclear acoustic resonance in silicon, Applied Physics Letters 119 (2021).
B. Joecker, A. D. Baczewski, J. K. Gamble, J. J. Pla, A. Saraiva, and A. Morello, Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory, New Journal of Physics 23, 073007 (2021).
M. T. Madzik, A. Laucht, F. E. Hudson, A. M. Jakob, B. C. Johnson, D. N. Jamieson, K. M. Itoh, A. S. Dzurak, and A. Morello, Conditional quantum operation of two exchange-coupled single-donor spin qubits in a moscompatible silicon device, Nature Communications 12,181 (2021).
A. Morello, J. J. Pla, P. Bertet, and D. N. Jamieson, Donor spins in silicon for quantum technologies, Advanced Quantum Technologies 3, 2000005 (2020).
M. T. Madzik, T. D. Ladd, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Laucht, et al., Controllable freezing of the nuclear spin bath in a single-atom spin qubit, Science Advances 6, eaba3442 (2020).
S. Asaad, V. Mourik, B. Joecker, M. A. Johnson, A. D. Baczewski, H. R. Firgau, M. T. Madzik, V. Schmitt, J. J. Pla, F. E. Hudson, et al., Coherent electrical control of a single high-spin nucleus in silicon, Nature 579, 205 (2020).
V. Mourik, S. Asaad, H. Firgau, J. J. Pla, C. Holmes, G. J. Milburn, J. C. McCallum, and A. Morello, Exploring quantum chaos with a single nuclear spin, Physical Review E 98, 042206 (2018).
S. B. Tenberg, S. Asaad, M. T. Madzik, M. A. Johnson, B. Joecker, A. Laucht, F. E. Hudson, K. M. Itoh, A. M. Jakob, B. C. Johnson, et al., Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices, Physical Review B 99, 205306 (2019).
J. Muhonen, J. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. Hudson, A. Dzurak, A. Morello,D. Jamieson, J. McCallum, et al., Coherent control via weak measurements in p 31 single-atom electron and nuclear spin qubits, Physical review B 98, 155201 (2018).
G. Tosi, F. A. Mohiyaddin, S. Tenberg, A. Laucht, and A. Morello, Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon, Physical Review B 98, 075313 (2018).
G. Tosi, F. A. Mohiyaddin, V. Schmitt, S. Tenberg, R. Rahman, G. Klimeck, and A. Morello, Silicon quantum processor with robust long-distance qubit couplings, Nature Communications 8, 450 (2017).
S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. E. Hudson, K. M. Itoh, J. C. McCallum, et al., A single-atom quantum memory in silicon, Quantum Science and Technology 2, 015009 (2017).
A. Laucht, R. Kalra, S. Simmons, J. P. Dehollain, J. T. Muhonen, F. A. Mohiyaddin, S. Freer, F. E. Hudson, K. M. Itoh, D. N. Jamieson, et al., A dressed spin qubit in silicon, Nature Nanotechnology 12, 61 (2017).
A. Laucht, S. Simmons, R. Kalra, G. Tosi, J. P. Dehollain, J. T. Muhonen, S. Freer, F. E. Hudson, K. M. Itoh, D. N. Jamieson, et al., Breaking the rotating wave approximation for a strongly driven dressed single-electron spin, Physical Review B 94, 161302 (2016).
J. P. Dehollain, J. T. Muhonen, R. Blume-Kohout, K. M. Rudinger, J. K. Gamble, E. Nielsen, A. Laucht, S. Simmons, R. Kalra, A. S. Dzurak, et al., Optimization of a solid-state electron spin qubit using gate set tomography, New Journal of Physics 18, 103018 (2016).
F. A. Mohiyaddin, R. Kalra, A. Laucht, R. Rahman, G. Klimeck, and A. Morello, Transport of spin qubits with donor chains under realistic experimental conditions, Physical Review B 94, 045314 (2016).
J. P. Dehollain, S. Simmons, J. T. Muhonen, R. Kalra, A. Laucht, F. Hudson, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, et al., Bell’s inequality violation with spins in silicon, Nature nanotechnology 11, 242 (2016).
A. Laucht, J. T. Muhonen, F. A. Mohiyaddin, R. Kalra, J. P. Dehollain, S. Freer, F. E. Hudson, M. Veldhorst, R. Rahman, G. Klimeck, et al., Electrically controlling single-spin qubits in a continuous microwave field, Science advances 1, e1500022 (2015).
J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, et al., Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking, Journal of Physics: Condensed Matter 27, 154205 (2015).
J. J. Pla, F. A. Mohiyaddin, K. Y. Tan, J. P. Dehollain, R. Rahman, G. Klimeck, D. N. Jamieson, A. S. Dzurak, and A. Morello, Coherent control of a single si 29 nuclear spin qubit, Physical Review Letters 113, 246801 (2014).
J. T. Muhonen, J. P. Dehollain, A. Laucht, F. E. Hudson, R. Kalra, T. Sekiguchi, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, et al., Storing quantum information for 30 seconds in a nanoelectronic device, Nature Nanotechnology 9, 986 (2014).
A. Laucht, R. Kalra, J. T. Muhonen, J. P. Dehollain,F. A. Mohiyaddin, F. Hudson, J. C. McCallum, D. N.Jamieson, A. S. Dzurak, and A. Morello, High-fidelity adiabatic inversion of a 31P electron spin qubit in natural silicon, Applied Physics Letters 104 (2014).
R. Kalra, A. Laucht, C. D. Hill, and A. Morello, Robust two-qubit gates for donors in silicon controlled by hyperfine interactions, Physical Review X 4, 021044 (2014).
E. Prati, A. Morello, et al., Quantum information in silicon devices based on individual dopants, Single-Atom Nanoelectronics , 5 (2013).
J. J. Pla, K. Y. Tan, J. P. Dehollain, W. H. Lim, J. J.Morton, F. A. Zwanenburg, D. N. Jamieson, A. S. Dzurak,and A. Morello, High-fidelity readout and control of a nuclear spin qubit in silicon, Nature 496, 334 (2013).
J. J. Pla, K. Y. Tan, J. P. Dehollain, W. H. Lim, J. J.Morton, D. N. Jamieson, A. S. Dzurak, and A. Morello, A single-atom electron spin qubit in silicon, Nature 489, 541 (2012).
A. Morello, J. J. Pla, F. A. Zwanenburg, K. W. Chan,K. Y. Tan, H. Huebl, M. M¨ott¨onen, C. D. Nugroho,C. Yang, J. A. Van Donkelaar, et al., Single-shot readout of an electron spin in silicon, Nature 467, 687 (2010).
Jeffrey McCallum, University of Melbourne, David N. Jamieson at University of Melbourne, Fay Hudson at UNSW Sydney, Andrew Dzurak at UNSW Sydney, Kohei M Itoh at Keio University.